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SZNUP1105LT1G - ESD Protection Diode

Datasheet Summary

Features

  • SOT.
  • 23 Package Allows One Separate Bidirectional Configuration.
  • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform).
  • Low Reverse Leakage Current (< 100 nA).
  • IEC Compatibility:.
  • IEC 61000.
  • 4.
  • 2 (ESD): Level 4.
  • IEC 61000.
  • 4.
  • 4 (EFT): 40 A.
  • 5/50 ns.
  • IEC 61000.
  • 4.
  • 5 (Lighting) 8.0 A (8/20 ms).
  • ISO 7637.
  • 1, Nonrepetitive EMI Surge Pulse TBD.
  • ISO.

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Datasheet preview – SZNUP1105LT1G

Datasheet Details

Part number SZNUP1105LT1G
Manufacturer ON Semiconductor
File Size 125.40 KB
Description ESD Protection Diode
Datasheet download datasheet SZNUP1105LT1G Datasheet
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Full PDF Text Transcription

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NUP1105LT1G, SZNUP1105LT1G ESD Protection Diode Single Line CAN/LIN Bus Protector The NUP1105L has been designed to protect LIN and single line CAN transceivers from ESD and other harmful transient voltage events. This device provides bidirectional protection for the data line with a single SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. www.onsemi.com SOT−23 BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Features • SOT−23 Package Allows One Separate Bidirectional Configuration • 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) • Low Reverse Leakage Current (< 100 nA) • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4 − IEC 61000−4−4 (EFT): 40 A – 5/50 ns − IEC 61000−4−5 (Lighting) 8.
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