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Si4532DY Dual N- and P-Channel FET

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Description

Si4532DY Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General .
Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's propretary, high cell den.

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Features

* These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's propretary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These d

Applications

* such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. • N-Channel 3.9A, 30V. RDS(ON) = 0.065Ω @VGS = 10V RDS(ON) = 0.095Ω @VGS = 4.5V. • P-Channel -3.5A,-30V. RDS(ON)= 0.085Ω @VGS = -10V RDS

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Si4532DY Dual and P-Channel FET ON Semiconductor
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