SI4501BD MOSFET

Vishay

Description

Si4501BDY Vishay Siliconix Complementary (N- and P-Channel) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 30 0.017 at VGS = 10 V 0.020 at.

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Datasheet Specifications

Part number: SI4501BD
Manufacturer: Vishay ↗
File Size: 239.28 KB
Datasheet: SI4501BD-Vishay.pdf
Description: MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Level Shift
* Load Switch S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VG

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SI4501BD MOSFET Vishay

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