* Compliant to RoHS Directive 2002/95/EC S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C
SI4501DY Datasheet (129.50 KB)
SI4501DY
Vishay ↗ Siliconix
129.50 KB
Complementary mosfet.
Si4501DY
Vishay Siliconix
Complementary MOSFET (N- and P-Channel)
PRODUCT SUMMARY
N-Channel
VDS (V) 30
P-Channel
-8
RDS(on) (Ω) 0.018 at VGS = 1.
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