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SI4501DY Complementary MOSFET

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Description

Si4501DY Vishay Siliconix Complementary MOSFET (N- and P-Channel) PRODUCT SUMMARY N-Channel VDS (V) 30 P-Channel -8 RDS(on) (Ω) 0.018 at VGS = 1.

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Features

* Compliant to RoHS Directive 2002/95/EC S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C

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Vishay Siliconix SI4501DY-like datasheet