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SI4501DY Datasheet - Vishay Siliconix

SI4501DY Complementary MOSFET

SI4501DY Features

* Compliant to RoHS Directive 2002/95/EC S2 G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 -8 Gate-Source Voltage VGS ± 20 ±8 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C

SI4501DY Datasheet (129.50 KB)

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Datasheet Details

Part number:

SI4501DY

Manufacturer:

Vishay ↗ Siliconix

File Size:

129.50 KB

Description:

Complementary mosfet.

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SI4501DY Complementary MOSFET Vishay Siliconix

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