MGW12N120 Insulated Gate Bipolar Transistor

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

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Datasheet Specifications

Part number: MGW12N120
Manufacturer: ON
File Size: 136.74 KB
Datasheet: MGW12N120_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor

Features

* >
* 800
* 441
* 2447 Customer Focus Center: 1
* 800
* 521
* 6274 Mfax™: RMFAX0@email. sps. mot. com
* TOUCHTONE 1
* 602
* 244
* 6609 ASIA/PACIFIC: Motorola Semiconductors H. K. Ltd. ; 8B Tai Ping Industrial Park, Motorola Fax Back System

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 247 Package with Isolated Mounting Hole
* High Speed Eoff: 150 mJ/A typical at

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MGW12N120 Insulated Gate Bipolar Transistor ON

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