MGW12N120 Datasheet - ON

MGW12N120 Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switchin.

MGW12N120 Features

* >

* 800

* 441

* 2447 Customer Focus Center: 1

* 800

* 521

* 6274 Mfax™: RMFAX0@email.sps.mot.com

* TOUCHTONE 1

* 602

* 244

* 6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System

MGW12N120 Datasheet (136.74 KB)

MGW12N120 Datasheet Preview — Preview of MGW12N120 PDF

Datasheet Details

Part number:

MGW12N120

Manufacturer:

File Size:

136.74 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

MGW12N120 Insulated Gate Bipolar Transistor (Motorola)

MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)

MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (ON)

MGW14N60ED Insulated Gate Bipolar Transistor (ON)

MGW20N120 Insulated Gate Bipolar Transistor (Motorola)

MGW20N120 Insulated Gate Bipolar Transistor (ON)

MGW20N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)

MGW21N60ED Insulated Gate Bipolar Transistor (Motorola)

MGW21N60ED Insulated Gate Bipolar Transistor (ON)

MGW30N60 Insulated Gate Bipolar Transistor (Motorola)

TAGS

MGW12N120 Insulated Gate Bipolar Transistor ON

Image Gallery

MGW12N120 Distributor