Datasheet4U Logo Datasheet4U.com

MGW20N120 Datasheet - ON

MGW20N120_ONSemiconductor.pdf

Preview of MGW20N120 PDF
MGW20N120 Datasheet Preview Page 2 MGW20N120 Datasheet Preview Page 3

Datasheet Details

Part number:

MGW20N120

Manufacturer:

ON

File Size:

139.30 KB

Description:

Insulated gate bipolar transistor.

MGW20N120, Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability.

Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time.

Fast switching characteristics result in e

MGW20N120 Features

* FAX0@email.sps.mot.com

* TOUCHTONE 1

* 602

* 244

* 6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System

* US & Canada ONLY 1

* 800

* 774

* 1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852

📁 Related Datasheet

📌 All Tags

ON MGW20N120-like datasheet