MGW20N120 Insulated Gate Bipolar Transistor

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

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Datasheet Specifications

Part number: MGW20N120
Manufacturer: ON
File Size: 139.30 KB
Datasheet: MGW20N120_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor

Features

* FAX0@email. sps. mot. com
* TOUCHTONE 1
* 602
* 244
* 6609 ASIA/PACIFIC: Motorola Semiconductors H. K. Ltd. ; 8B Tai Ping Industrial Park, Motorola Fax Back System
* US & Canada ONLY 1
* 800
* 774
* 1848 51 Ting Kok Road, Tai Po, N. T. , Hong Kong. 852

Applications

* requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 247 Package with Isolated Mounting Hole
* High Speed Eoff: 160 mJ/A typical at 125°C
* High Short C

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MGW20N120 Insulated Gate Bipolar Transistor ON

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