MGW21N60ED Datasheet, Transistor, ON

MGW21N60ED Features

  • Transistor ate Resistance 4 Motorola IGBT Device Data MGW21N60ED 1.4 Eoff , TURN
      –OFF ENERGY LOSSES (mJ) 1.6 Eoff , TURN
      –OFF ENERGY LOSSES (mJ) VCC = 360 V VGE =

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Part number:

MGW21N60ED

Manufacturer:

ON

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152.62kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

Datasheet Preview: MGW21N60ED 📥 Download PDF (152.62kb)
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MGW21N60ED Application

  • Applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and resul

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MGW21N60ED
Insulated
Gate
Bipolar
Transistor
ON

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