MGW21N60ED - Insulated Gate Bipolar Transistor

Datasheet Details

Part number	MGW21N60ED
Manufacturer	ON
File Size	152.62 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MGW21N60ED_ONSemiconductor.pdf

19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 A K P.
Y.
V F D 0.25 (0.010) M H J G DIM A B C D E F G H J K L P Q R U V Y Q S GATE.

📁 MGW21N60ED Similar Datasheet

MGW20N120 - Insulated Gate Bipolar Transistor (Motorola)
MGW20N60D - Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)
MGW12N120 - Insulated Gate Bipolar Transistor (Motorola)
MGW12N120D - Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)
MGW30N60 - Insulated Gate Bipolar Transistor (Motorola)

Other Datasheets by ON

Published: Apr 27, 2005 |