MGW21N60ED Insulated Gate Bipolar Transistor

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N *Channel Enhancemen.

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Datasheet Specifications

Part number: MGW21N60ED
Manufacturer: ON
File Size: 152.62 KB
Datasheet: MGW21N60ED_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor

Features

* 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 N

Applications

* requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost. This new E
* series introduces an energy ef

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MGW21N60ED Insulated Gate Bipolar Transistor ON

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