* 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 4: PIN 1. 2. 3. 4. INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 N
MGW21N60ED Datasheet (152.62 KB)
MGW21N60ED
ON
152.62 KB
Insulated gate bipolar transistor.
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW21N60ED/D
Insulated Gate Bipolar Transistor
N
*Channel Enhancemen.
📁 Related Datasheet
MGW21N60ED Insulated Gate Bipolar Transistor (Motorola)
MGW20N120 Insulated Gate Bipolar Transistor (Motorola)
MGW20N120 Insulated Gate Bipolar Transistor (ON)
MGW20N60D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)
MGW12N120 Insulated Gate Bipolar Transistor (Motorola)
MGW12N120 Insulated Gate Bipolar Transistor (ON)
MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (Motorola)
MGW12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode (ON)
MGW14N60ED Insulated Gate Bipolar Transistor (ON)
MGW30N60 Insulated Gate Bipolar Transistor (Motorola)
