MGY20N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D.

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Datasheet Specifications

Part number: MGY20N120D
Manufacturer: ON
File Size: 171.79 KB
Datasheet: MGY20N120D_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Features

* 02 TO
* 264 ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co
* packaged IGBT’s save space, reduce assembly time and cost.
* Indust

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MGY20N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode ON

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