MGY20N120D Datasheet - ON

MGY20N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY20N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY20N120D Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit ra.

MGY20N120D Features

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* 264 ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out

MGY20N120D Datasheet (171.79 KB)