MGY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode D.

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Datasheet Specifications

Part number: MGY25N120D
Manufacturer: ON
File Size: 171.60 KB
Datasheet: MGY25N120D_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Applications

* requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co
* packaged IGBT’s save space, reduce assembly time and cost.
* Indust

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MGY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode ON

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