NTD20N06, ON Semiconductor
MOSFET – Power, N-Channel, DPAK
20 A, 60 V
NTD20N06, NTDV20N06
Description Designed for low voltage, high speed switching applications in power
suppli.
NTD20N06L, ON Semiconductor
NTD20N06L, NTDV20N06L
MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK
20 A, 60 V
Designed for low voltage, high speed switching applications in p.
NTD20, EDI
NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI.
NTD20P06L, ON Semiconductor
NTD20P06L, NTDV20P06L
MOSFET – Power, Single, P-Channel, DPAK
-60 V, -15.5 A
Features
• Withstands High Energy in Avalanche and Commutation Modes • .
NTD23N03R, ON
NTD23N03R Power MOSFET
23 Amps, 25 Volts, N−Channel DPAK
Features
• • • • • •
Pb−Free Packages are Available Planar HD3e Process for Fast Switching .
NTD24N06, ON Semiconductor
NTD24N06
MOSFET – Power, N-Channel, DPAK/IPAK
60 V, 24 A
Designed for low voltage, high speed switching applications in power supplies, converters an.
NTD24N06L, ON Semiconductor
NTD24N06L, STD24N06L
MOSFET – Power, N-Channel, Logic Level, DPAK
24 A, 60 V
Designed for low voltage, high speed switching applications in power su.
