20P03HL - Power MOSFET

ON Semiconductor

Datasheet Details

Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature.
Pb.
Free Packages are Available http://onsemi. com V(BR)DSS 30 V RDS(on) TYP 90 mW@5.0 V ID MAX 20 A (Note 1) P.
Channel D G.

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