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AFGB30T65RQDN - IGBT

ON Semiconductor

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Datasheet Details

Part number	AFGB30T65RQDN
Manufacturer	ON Semiconductor ↗
File Size	241.09 KB
Description	IGBT
Datasheet	AFGB30T65RQDN-ONSemiconductor.pdf

AFGB30T65RQDN Product details

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Coefficient for Easy Parallel Operation.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ. ) @ IC = 30 A.
100% of the Parts Tested for ILM (Note 2).
High Input Impedance.
Fast Switching.
Tightened Parameter Distribution.
This Device is Pb.
Free and RoHS Compliant Typical.

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Published: Oct 3, 2022 |