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MJE200 Complementary Silicon Power Plastic Transistors

MJE200 Description

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, h.

MJE200 Features

* ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
* ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc
* ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc =

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📁 Related Datasheet

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  • MJE221 - NPN SILICON POWER TRANSISTOR (Central Corp)
  • MJE222 - NPN SILICON POWER TRANSISTOR (Central Corp)
  • MJE223 - NPN SILICON POWER TRANSISTOR (Central Corp)
  • MJE224 - NPN SILICON POWER TRANSISTOR (Central Corp)

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Complementary Silicon Power Plastic Transistors ON Semiconductor
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