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MJE200G - Complementary Silicon Power Plastic Transistors

MJE200G Description

Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low *power, high <.

MJE200G Features

* High DC Current Gain
* Low Collector
* Emitter Saturation Voltage
* High Current
* Gain
* Bandwidth Product
* Annular Construction for Low Leakage
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Symbol R

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Complementary Silicon Power Plastic Transistors ON Semiconductor
ON Semiconductor MJE200G-like datasheet