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MJE210G, MJE200G - Complementary Silicon Power Plastic Transistors

MJE210G Description

Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low *power, high <.

MJE210G Features

* High DC Current Gain
* Low Collector
* Emitter Saturation Voltage
* High Current
* Gain
* Bandwidth Product
* Annular Construction for Low Leakage
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Symbol R

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MJE210G, MJE200G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MJE210G, MJE200G
Manufacturer
ON Semiconductor ↗
File Size
208.22 KB
Datasheet
MJE200G-ONSemiconductor.pdf
Description
Complementary Silicon Power Plastic Transistors
Note
This datasheet PDF includes multiple part numbers: MJE210G, MJE200G.
Please refer to the document for exact specifications by model.

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📌 All Tags

Complementary Silicon Power Plastic Transistors ON Semiconductor
ON Semiconductor MJE210G-like datasheet