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NTGD3148N Power MOSFET

NTGD3148N Description

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 .

NTGD3148N Features

* ăLow Threshold Levels, VGS(th) < 1.5 V
* ăLow Gate Charge (3.8 nC)
* ăLeading Edge Trench Technology of Low RDS(on)
* ăHigh Power and Current Handling Capability

NTGD3148N Applications

* http://onsemi. com N-CHANNEL MOSFET V(BR)DSS 20 V RDS(on) Max 70 mW @ 4.5 V 100 mW @ 2.5 V ID Max 3.5 A
* ăDC-DC Converters (Buck and Boost Circuits)
* ăLow Side Load Switch
* ăOptimized for Battery and Load Management Applications in Portable Equipment Like Cell Phones, DSCs,

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