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NTJD2152P Trench Small Signal MOSFET

NTJD2152P Description

NTJD2152P Trench Small Signal MOSFET 8 V, Dual P *Channel, SC *88 ESD Protection .

NTJD2152P Features

* http://onsemi. com V(BR)DSS RDS(on) TYP 0.22 W @
* 4.5 V
* 8 V 0.32 W @
* 2.5 V 0.51 W @
* 1.8 V
* 0.775 A ID Max
* Leading
* 8 V Trench for Low RDS(ON) Performance ESD

NTJD2152P Applications

* SOT
* 363 SC
* 88 (6 LEADS) S1 Value
* 8.0 ±8.0 Unit V V A 1 6 D1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on

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