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NXH80B120H2Q0 - Dual Boost Power Module

ON Semiconductor

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Datasheet Details

Part number	NXH80B120H2Q0
Manufacturer	ON Semiconductor ↗
File Size	291.00 KB
Description	Dual Boost Power Module
Datasheet	NXH80B120H2Q0-ONSemiconductor.pdf

NXH80B120H2Q0 Product details

Features

Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module.
1200 V FSII IGBT VCE(SAT) = 2.2 V.
1200 V SiC Diode VF = 1.4 V.
Low Inductive Layout.
Solderable Pins.
Thermistor.
Bare Copper and Nickel.
Plated DBC Options Typical.

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Published: Apr 1, 2020 |