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FQP27P06 P-Channel MOSFET

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Description

DATA SHEET www.onsemi.com MOSFET * P-Channel, QFET -60 V, -27 A, 70 mW FQP27P06 VDSS *60 V RDS(on) MAX 70 mW @ *10 V ID MA.
This P. Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

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Features

* 27 A,
* 60 V, RDS(on) = 70 mW (Max. ) @ VGS =
* 10 V, ID =
* 13.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating GDS TO
* 220
* 3LD CASE

FQP27P06 Distributors

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FQP27P06 P-Channel MOSFET On Semiconductor
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