FQP27P06 Datasheet (On Semiconductor)

FQP27P06, P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s

FQP27P06 Features

* 27 A,

* 60 V, RDS(on) = 70 mW (Max.) @ VGS =

* 10 V, ID =

* 13.5 A

* Low Gate Charge (Typ. 33 nC)

* Low Crss (Typ. 120 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating GDS TO

* 220

* 3LD CASE