PJD50N10AL-AU Datasheet, Mosfet, PAN JIT

PDF File Details

Part number:

PJD50N10AL-AU

Manufacturer:

PAN JIT

File Size:

411.91kb

Download:

📄 Datasheet

Description:

100v n-channel mosfet.

TAGS

📁 Related Datasheet

PJD50N10AL - 100V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , VGS@4.5V, ID.

PJD50N10L - 100V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJU50N10L / PJD50N10L 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 50 A Features  RDS(ON), VGS@10V,ID@30A<22mΩ  High switching.

PJD50P04-AU - 40V P-Channel Enhancement Mode MOSFET (PAN JIT)
PJD50P04-AU 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -50 A Features  RDS(ON), VGS@-10V, ID@-10A<12mΩ  RDS(ON), VGS@-4.5V, ID.

PJD5NA50 - 500V N-Channel MOSFET (Pan Jit International)
PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50 500V N-Channel MOSFET Voltage 500 V Current 5A Features  RDS(ON), VGS@10V,ID@2.5A<1.55Ω  High switch.

PJD5NA80 - 800V N-Channel MOSFET (Pan Jit International)
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80 800V N-Channel MOSFET Voltage 800 V Current 5A Features  RDS(ON), VGS@10V,ID@ 2.5A<2.7Ω  High switch.

PJD04N60D - N-Channel MOSFETS (Potens semiconductor)
600V N-Channel MOSFETS PJD04N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJD04N70L - N-Channel MOSFETS (Potens semiconductor)
700V N-Channel MOSFETs PJD04N70L General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJD06N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
.. PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • .

PJD09N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
.. PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ •.

PJD100P04-AU - 40V P-Channel Enhancement Mode MOSFET (PAN JIT)
PJD100P04-AU 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -85 A TO-252AA Features  RDS(ON), VGS@-10V, ID@-20A<6.5mΩ  RDS(ON),.