Datasheet4U.com

PJD04N70L - N-Channel MOSFETS

Potens semiconductor

📥 Download Datasheet

PJD04N70L Datasheet Preview — Preview of PJD04N70L PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	PJD04N70L
Manufacturer	Potens semiconductor
File Size	441.87 KB
Description	N-Channel MOSFETS
Datasheet	PJD04N70L-Potenssemiconductor.pdf

PJD04N70L Product details

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

Features

4A,700V, RDS(ON) =0.93Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

📁 PJD04N70L Similar Datasheet

PJD06N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJD09N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJD100P04-AU - 40V P-Channel Enhancement Mode MOSFET (PAN JIT)
PJD10P10A - 100V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PJD14P06-AU - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PJD14P06A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PJD14P06A-AU - 6V P-Channel MOSFET (PAN JIT)
PJD14P10A - 100V P-Channel Enhancement Mode MOSFET (Pan Jit International)

Other Datasheets by Potens semiconductor

PJD04N60D - N-Channel MOSFETS
PJD11N60D - N-Channel MOSFETS
PJD11N65D - N-Channel MOSFETS

Published: Aug 23, 2018 |