PJD11N65D

N-Channel MOSFETS

Potens semiconductor

PJD11N65D Features

* 11A,650V, RDS(ON) =0.38Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* High efficient switched mode power supplies

* LED Lighting

* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherw

PJD11N65D General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. T.

PJD11N65D Datasheet (723.94 KB)

PJD11N65D Datasheet Preview — Preview of PJD11N65D PDF

Datasheet Details

Part number:

PJD11N65D

Manufacturer:

Potens semiconductor

File Size:

723.94 KB

Description:

N-channel mosfets.

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PJD11N65D N-Channel MOSFETS Potens semiconductor

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PJD11N65D Features

PJD11N65D General Description

Datasheet Details

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