PJD11N65D - N-Channel MOSFETS
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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PJD11N65D Features
* 11A,650V, RDS(ON) =0.38Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherw
