PJD04N60D N-Channel MOSFETS

Potens semiconductor

Description

600V N-Channel MOSFETS PJD04N60D General .
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

📥 Download Datasheet

PJD04N60D Datasheet Preview — Preview of PJD04N60D PDF

Datasheet Specifications

Part number: PJD04N60D
Manufacturer: Potens semiconductor
File Size: 713.76 KB
Datasheet: PJD04N60D-Potenssemiconductor.pdf
Description: N-Channel MOSFETS

Features

* 4A,600V, RDS(ON) =1.2Ω@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

Applications

* High efficient switched mode power supplies
* LED Lighting
* Adapter/charger Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25℃) Drain Current

PJD04N60D Distributors

📁 Related Datasheet

PJD06N03 PJD09N03 PJD100P04-AU PJD10P10A PJD14P06-AU PJD14P06A

📌 All Tags

PJD04N60D N-Channel MOSFETS Potens semiconductor

Potens semiconductor PJD04N60D-like datasheet

PJD04N70L

PJD11N60D

PJD11N65D