PJD04N60D MOSFETS Datasheet - Potens semiconductor

PJD04N60D Features

Mosfets
4A,600V, RDS(ON) =1.2Ω@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available Applications

PDF File Details

Part number:

PJD04N60D

Manufacturer:

Potens semiconductor

File Size:

713.76kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has bee

📥 Download PDF (713.76kb)

PJD04N60D Application

Applications
High efficient switched mode power supplies
LED Lighting
Adapter/charger Absolute Maximum Ratings (Tc=25

TAGS

📁 Related Datasheet

PJD04N70L - N-Channel MOSFETS (Potens semiconductor)
700V N-Channel MOSFETs PJD04N70L General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJD06N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
.. PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=6mΩ • RDS(ON), VGS@4.5V,IDS@30A=9mΩ • .

PJD09N03 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
.. PJD09N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ •.

PJD100P04-AU - 40V P-Channel Enhancement Mode MOSFET (PAN JIT)
PJD100P04-AU 40V P-Channel Enhancement Mode MOSFET Voltage -40 V Current -85 A TO-252AA Features  RDS(ON), VGS@-10V, ID@-20A<6.5mΩ  RDS(ON),.

PJD10P10A - 100V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJD10P10A 100V P-Channel Enhancement Mode MOSFET Voltage -100 V Current -10 A Features  RDS(ON), VGS@-10V,ID@-5A<210mΩ  RDS(ON), VGS@-4.5V,ID@-.

PJD11N60D - N-Channel MOSFETS (Potens semiconductor)
600V N-Channel MOSFETS PJD11N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJD11N65D - N-Channel MOSFETS (Potens semiconductor)
650V N-Channel MOSFETS PJD11N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction techno.

PJD14P06-AU - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJD14P06-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-7A<115mΩ  RDS(ON), VGS@-4.5V,ID@.

PJD14P06A - 60V P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), VG.

PJD14P06A-AU - 6V P-Channel MOSFET (PAN JIT)
PPJD14P06A-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V, ID@-6A<110mΩ  RDS(ON), VGS@-4.5V,.

PJD04N60D Datasheet, Mosfets, Potens semiconductor