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PJD06N03

N-Channel Enhancement Mode MOSFET

PJD06N03 Features

* RDS(ON), VGS@10V,IDS@30A=6mΩ

* RDS(ON), VGS@4.5V,IDS@30A=9mΩ

* Advanced trench process technology

* High Density Cell Design For Uitra Low On-Resistance

* Specially Designed for DC/DC Converters and Motor Drivers

* Fully Characterized Avalanche Volta

PJD06N03 Datasheet (169.34 KB)

Preview of PJD06N03 PDF

Datasheet Details

Part number:

PJD06N03

Manufacturer:

Pan Jit International

File Size:

169.34 KB

Description:

N-channel enhancement mode mosfet.

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PJD06N03 N-Channel Enhancement Mode MOSFET Pan Jit International

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