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PJD06N03 - N-Channel Enhancement Mode MOSFET

Pan Jit International

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Datasheet Details

Part number	PJD06N03
Manufacturer	Pan Jit International
File Size	169.34 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	PJD06N03_PanJitInternational.pdf

PJD06N03 Product details

Features

RDS(ON), VGS@10V,IDS@30A=6mΩ.
RDS(ON), VGS@4.5V,IDS@30A=9mΩ.
Advanced trench process technology.
High Density Cell Design For Uitra Low On-Resistance.
Specially Designed for DC/DC Converters and Motor Drivers.
Fully Characterized Avalanche Voltage and Current.
Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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Published: Jan 5, 2007 |