PJD15N06L - N-Channel Enhancement Mode MOSFET
PJD15N06L Features
* RDS(ON), VGS@10V,IDS@10A=40mΩ
* RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ
* Advanced Trench Process Technology
* High Density Cell Design For Ultra Low On-Resistance
* Specially Designed for DC/DC Converters
* Fully Characterized Avalanche Voltage and Current
