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PAN3080L - 30V N-channel enhancement mode MOSFET

PAN3080L Description

PAN3080L 30V N-channel enhancement mode MOSFET General .
The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

PAN3080L Features

* VDS(max) =30V
* ID (max)=80A
* Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A
* Good stability and uniformity
* 100% avalanche tested

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Datasheet Details

Part number
PAN3080L
Manufacturer
PSD
File Size
792.46 KB
Datasheet
PAN3080L-PSD.pdf
Description
30V N-channel enhancement mode MOSFET

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30V N-channel enhancement mode MOSFET PSD
PSD PAN3080L-like datasheet