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PAN3080L - 30V N-channel enhancement mode MOSFET

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PAN3080L 30V N-channel enhancement mode MOSFET by PSD - Datasheet Preview — Datasheet preview – PAN3080L

Datasheet Details

Part number	PAN3080L
Manufacturer	PSD
File Size	792.46 KB
Description	30V N-channel enhancement mode MOSFET
Datasheet	PAN3080L Datasheet
Additional preview pages of the PAN3080L datasheet.

Product details

Description

The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

Features

VDS(max) =30V.
ID (max)=80A.
Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A.
Good stability and uniformity.
100% avalanche tested.
Excellent package for good heat dissipation.

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