PAN3080L 30V N-channel enhancement mode MOSFET

Description

PAN3080L 30V N-channel enhancement mode MOSFET General .
The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge.

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PAN3080L Datasheet Preview — Preview of PAN3080L PDF

Datasheet Specifications

Part number: PAN3080L
Manufacturer: PSD
File Size: 792.46 KB
Datasheet: PAN3080L-PSD.pdf
Description: 30V N-channel enhancement mode MOSFET

Features

* VDS(max) =30V
* ID (max)=80A
* Extremely Low RDS(on): Typ. RDS(on) = 4.0 mΩ @VGS=10 V, ID=40 A
* Good stability and uniformity
* 100% avalanche tested

PAN3080L Distributors

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PAN3080L 30V N-channel enhancement mode MOSFET PSD

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