Part number: SW16CXC950 Manufacturer: PST File Size: 161.02kb Download: 📄 Datasheet Description: General purpose high power standard rectifier.
SW1608xxxxLx-xxx - WOUND CHIP INDUCTOR (ABC Taiwan Electronics) SPECIFICATION FOR APPROVAL REF : 20090828-C PROD. NAME ABC'S DWG NO. SW1608□□□□L□-□□□ PAGE: 1 WOUND CHIP INDUCTOR ABC'S ITEM NO. Ⅰ﹒CONFIGURATION & .
SW160R02VT - N-channel MOSFET (Samwin) SW160R02VT Features N-channel Enhanced mode DFN3*3 MOSFET High ruggedness Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V Low Gate Cha.
SW16N65K - MOSFET (SEMIPOWER) SAMWIN SW16N65K N-channel TO-220 /TO-220F MOSFET Features TO-220 TO-220F ■ High ruggedness ■ RDS(ON) (Max0.25Ω)@VGS=10V ■ Gate Charge (Typical 4.
SW1 - 1W High Isolation 3kVdc Surface Mount DC-DC Converter (Superworld Electronics) SUPERWORLD ELECTRONICS SW1 EHISM Series – 1W High Isolation 3kVdc Surface Mount DC-DC Converter SW1 EHISM PRODUCT RANGE Model SW105S05EHISMF SW105S12E.
SW10-0312 - GaAs SPDT Reflective Switch (Tyco) GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input V 5.00 SW10-0312 Features n Integral TTL Driver n Low DC Power Consumption n Su.
SW10-0313 - Matched GaAs SPDT Switch (Tyco) Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input V 4.00 SW10-0313 Features n Integral TTL Driver n Low DC Power Consumption n Surfa.
SW100N03 - N-channel MOSFET (SAMWIN) SAMWIN SW100N03 N-channel MOSFET Features TO-220 TO-251 TO-252 TO-263 ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69n.
SW100N10 - MOSFET (SEMIPOWER) SAMWIN SW100N10 N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d.
SW100N10A - MOSFET (SEMIPOWER) SAMWIN SW100N10A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 7.4m Ω)@VGS=10V ■ Gate Charge (Typ 127nC) ■ Improved dv.
SW100N10B - MOSFET (SEMIPOWER) SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d.