SW160R02VT
Samwin
754.67kb
N-channel mosfet. S This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better charact
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SW1608xxxxLx-xxx - WOUND CHIP INDUCTOR
(ABC Taiwan Electronics)
SPECIFICATION FOR APPROVAL
REF : 20090828-C PROD. NAME ABC'S DWG NO. SW1608□□□□L□-□□□ PAGE: 1
WOUND CHIP INDUCTOR
ABC'S ITEM NO.
Ⅰ﹒CONFIGURATION & .
SW16CXC950 - GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
(PST)
Technical Data : AD-031
Page 1 of 2
PST SW*CXC950- Standard Rectifier
1400 - 2000 VRRM; 2400 A avg
***************************************************.
SW16N65K - MOSFET
(SEMIPOWER)
SAMWIN
SW16N65K
N-channel TO-220 /TO-220F MOSFET
Features
TO-220
TO-220F
■ High ruggedness ■ RDS(ON) (Max0.25Ω)@VGS=10V ■ Gate Charge (Typical 4.
SW1 - 1W High Isolation 3kVdc Surface Mount DC-DC Converter
(Superworld Electronics)
SUPERWORLD ELECTRONICS
SW1 EHISM Series – 1W High Isolation 3kVdc Surface Mount DC-DC Converter
SW1 EHISM PRODUCT RANGE
Model SW105S05EHISMF SW105S12E.
SW10-0312 - GaAs SPDT Reflective Switch
(Tyco)
GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input
V 5.00
SW10-0312
Features
n Integral TTL Driver n Low DC Power Consumption n Su.
SW10-0313 - Matched GaAs SPDT Switch
(Tyco)
Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input
V 4.00
SW10-0313
Features
n Integral TTL Driver n Low DC Power Consumption n Surfa.
SW100N03 - N-channel MOSFET
(SAMWIN)
SAMWIN
SW100N03
N-channel MOSFET
Features
TO-220 TO-251 TO-252 TO-263
■ High ruggedness
■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typical 69n.
SW100N10 - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 11mΩ)@VGS=10V ■ Gate Charge (Typical 109nC) ■ Improved d.
SW100N10A - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10A
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 7.4m Ω)@VGS=10V ■ Gate Charge (Typ 127nC) ■ Improved dv.
SW100N10B - MOSFET
(SEMIPOWER)
SAMWIN
SW100N10B
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved d.