SW160R02VT Datasheet (Samwin)

SW160R02VT, N-channel MOSFET

S This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

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SW160R02VT Features

* N-channel Enhanced mode DFN3

* 3 MOSFET

* High ruggedness

* Low RDS(ON) (Typ 12.3mΩ)@VGS=2.5V (Typ 9.4mΩ)@VGS=4.5V

* Low Gate Charge (Typ 15.4nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:DC-DC Converter, Inverter, Synchronous Rectification DFN3