* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V D
PL2301GD Datasheet (595.66 KB)
PL2301GD
PULAN TECHNOLOGY
595.66 KB
P-channel high density trench mosfet.
PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V.
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