PL2301GD P-Channel High Density Trench MOSFET

Description

PL2301GD PULAN TECHNOLOGY CO., LIMITED P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -20V -2.2 125 @ VGS= 4.5V.

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Datasheet Specifications

Part number: PL2301GD
Manufacturer: PULAN TECHNOLOGY
File Size: 595.66 KB
Datasheet: PL2301GD-PULANTECHNOLOGY.pdf
Description: P-Channel High Density Trench MOSFET

Features

* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 V D

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PL2301GD P-Channel High Density Trench MOSFET PULAN TECHNOLOGY

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