Part number:
F10N60
Manufacturer:
Pan Jit International
File Size:
264.30 KB
Description:
600v n-channel enhancement mode mosfet.
* 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A
* Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2
F10N60
Pan Jit International
264.30 KB
600v n-channel enhancement mode mosfet.
📁 Related Datasheet
F10N60 10A 600V N-channel Enhancement Mode Power MOSFET (ROUM)
F10N65 650V N-Channel Enhancement Mode MOSFET (Pan Jit International)
F10N12L N-Channel Enhancement Mode Power Field Effect Transistor Chip (General Electric Solid State)
F10NK50Z STF10NK50Z (STMicroelectronics)
F1000LC120 Extra Fast Recovery Diode (IXYS)
F1001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
F100122 9-BIT BUFFER (National Semiconductor)
F100124 Hex TTL-to-ECL Translator (National Semiconductor)
F100125 Hex ECL-to-TTL Translator (National Semiconductor)
F100136 4-Stage Counter / Shift Register (National Semiconductor)
