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SiC10A120T SILICON CARBIDE SCHOTTKY DIODE

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Description

SiC10A120T SILICON CARBIDE SCHOTTKY DIODE Voltage 1200 V Current 10 A .

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Datasheet Specifications

Part number
SiC10A120T
Manufacturer
Pan Jit International
File Size
453.86 KB
Datasheet
SiC10A120T-PanJitInternational.pdf
Description
SILICON CARBIDE SCHOTTKY DIODE

Features

* Temperature Independent Switching Behavior
* Low Conduction and Switching Loss
* High Surge Current Capability
* Positive Temperature Coefficient on VF
* Fast Reverse Recovery Mechanical Data
* Case: Molded plastic, TO-220AC
* Marking: 10A120T Benefits
* High Fre

Applications

* shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no representation or warranty that such applications will be suitable for the specified use without further

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