* q q q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. (Ta=25˚C) Ratings
* 25
* 20
* 7
* 1
* 0.5 300 150
* 55 ~ +150 Uni
2SA1512
Panasonic Semiconductor
37.16 KB
Silicon pnp transistor.
Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification Complementary to 2SC1788
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1.
📁 Related Datasheet
2SA1510 - Epitaxial Planar Silicon Transistor
(Sanyo)
This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://../
This Material Copyrighted By Its Respective Manu.
2SA1511 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
(Sanyo Semicon Device)
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2SA1511 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS
(Sanyo)
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2SA1513 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1513
DESCRIPTION ·With TO-3PML package ·High cur.
2SA1513 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SA1513
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High Currrent Capacity ·Low Collec.
2SA1514K - High-voltage Amplifier Transistor
(Rohm)
2SA1579 / 2SA1514K
High-voltage Amplifier Transistor (-120V,-50mA)
Datasheet
Parameter
VCEO IC
Value
-120V -50mA
lFeatures
1)High breakdown voltag.
2SA1514K - Transistor
(Kexin)
SMD Type
High-voltage Amplifier Transistor 2SA1514K
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
High breakdown vol.
2SA1515 - Medium Power Transistor
(Rohm)
Transistors
Medium Power Transistor (*32V, *1A)
2SB1132 / 2SA1515S / 2SB1237
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –.
