2SB1462 - Silicon PNP epitaxial planer type Transistor

Panasonic Semiconductor

Datasheet Details

Part number	2SB1462
Manufacturer	Panasonic ↗ Semiconductor
File Size	41.26 KB
Description	Silicon PNP epitaxial planer type Transistor
Datasheet	2SB1462_PanasonicSemiconductor.pdf

q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC.

📁 2SB1462 Similar Datasheet

2SB1464 - PNP Transistor (Panasonic)
2SB1465 - PNP SILICON EPITAXIAL TRANSISTOR (Renesas)
2SB1467 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SB1468 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SB1400 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SB1401 - Low frequency power amplifier (Hitachi)
2SB1402 - SILICON POWER TRANSISTOR (SavantIC)
2SB1403 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by Panasonic Semiconductor

Published: Mar 22, 2005 |