Click to expand full text
Transistors
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
Unit: mm
0.40+–00..0150
0.16+–00..0160
■ Features
3
1.50–+00..0255 2.8–+00..32
• Optimum for RF amplification of FM/AM radios
0.4±0.2
• High transition frequency fT
5˚
• Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine
1
2
packing
(0.95) (0.95)
1.9±0.1
(0.65)
/ ■ Absolute Maximum Ratings Ta = 25°C
2.90+–00..0250
10˚
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
0 to 0.1 1.1–+00..12 1.1–+00..