2SC2408 - Silicon NPN RF Transistor

Datasheet Summary

Description

NF = 2.4 dB TYP.

︱S21e︱2 = 21 dB TYP.

performance and reliable operation.

Designed for use in high frequency wide band amplifier.

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2SC2408
Manufacturer	Inchange Semiconductor
File Size	176.22 KB
Description	Silicon NPN RF Transistor
Datasheet	2SC2408 Datasheet
Additional preview pages of the 2SC2408 datasheet.

📁 Similar Datasheet

2SC2404 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC2404 - Silicon PNP Transistor (Kexin)
2SC2404 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC2405 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC2405 - Silicon PNP Transistor (Kexin)
2SC2406 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC2406 - Silicon PNP Transistor (Kexin)
2SC2407 - NPN Silicon Transistor (NEC)
2SC2411 - Silicon Transistor (GME)
2SC2411 - NPN Transistors (Kexin)

Other Datasheets by Inchange Semiconductor

2SC2414 - Silicon NPN Power Transistor
2SC2415 - Silicon NPN Power Transistor
2SC2416 - Silicon NPN Power Transistor
2sc2433 - Silicon NPN Power Transistor
2SC2437 - Silicon NPN Power Transistors
2SC2438 - Silicon NPN Power Transistors
2SC2481 - Power Transistor
2SC2233 - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2408 DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 150 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.

Published: Oct 29, 2013 |