2SC2414 - Silicon NPN Power Transistor

Datasheet Summary

Description

High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed power switching applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SC2414
Manufacturer	Inchange Semiconductor
File Size	189.75 KB
Description	Silicon NPN Power Transistor
Datasheet	2SC2414 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2414 · isc website：www.iscsemi.

Published: Oct 29, 2013 |