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2sc2433 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). High Current Capability. Wide Area of Safe Operation. Complement to Ty.

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Datasheet Specifications

Part number
2sc2433
Manufacturer
Inchange Semiconductor
File Size
213.40 KB
Datasheet
2sc2433_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Power switching applications
* High frequency power amplifier
* Switching regulators
* DC-DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC

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