2SC2480 Datasheet PDF - Panasonic Semiconductor Silicon NPN Transistor Specs

2SC2480 - Silicon NPN Transistor

Datasheet Summary

Features

s 0.40+.
00..0150 3 0.16+.
00..0160 0.4±0.2 1.50.
+00..0255 2.8.
+00..32.
High transition frequency fT.
Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) (0.65) 1.9±0.1 /.
Absolute Maximum Ratings Ta = 25°C 2.90+.
00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty.

Datasheet Details

Part number	2SC2480
Manufacturer	Panasonic Semiconductor
File Size	260.51 KB
Description	Silicon NPN Transistor
Datasheet	2SC2480 Datasheet
Additional preview pages of the 2SC2480 datasheet.

📁 Similar Datasheet

2SC2481 - Silicon NPN Transistor (Toshiba)

2SC2481 - Power Transistor (Inchange Semiconductor)

2SC2482 - NPN Transistor (Toshiba Semiconductor)

2SC2482 - NPN Transistor (LGE)

2SC2482 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

2SC2482 - NPN Transistor (INCHANGE)

2SC2482 - NPN Transistor (UTC)

2SC2482 - NPN Epitaxial Silicon Transistor (MCC)

2SC2482-O - NPN Epitaxial Silicon Transistor (MCC)

2SC2482-Y - NPN Epitaxial Silicon Transistor (MCC)

Full PDF Text Transcription

Click to expand full text

Transistors 2SC2480 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm ■ Features 0.40+–00..0150 3 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.95) (0.95) (0.65) 1.9±0.1 / ■ Absolute Maximum Ratings Ta = 25°C 2.90+–00..0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e. d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.1 1.1–+00..12 1.1–+00..

Published: Mar 22, 2005 |