q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).
0.2
s Absolute Maximum Ratings
Parameter Collecto
2SC5336, NEC
PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
•
PACKAGE DIMEN.
2SC5336, Renesas
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
2SC5337, NEC
DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
T.
2SC5338, NEC
DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SC5338
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
T.
