Part number:
2SC5338
Manufacturer:
NEC
File Size:
71.28 KB
Description:
Npn transistor.
* PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 High gain |S21 | = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz 2
* Low distortion and low voltage IM2 =
* 55 dB TYP., IM3 =
* 76 dB TYP. @VCE = 5 V, Ic = 50 mA, Vin = 105 dB µ V/75 Ω
* gain-im
2SC5338
NEC
71.28 KB
Npn transistor.
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2SC5336 - NPN TRANSISTOR
(NEC)
PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
•
PACKAGE DIMEN.
2SC5336 - NPN SILICON RF TRANSISTOR
(Renesas)
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
2SC5337 - NPN TRANSISTOR
(NEC)
DATA SHEET PRELIMINARY DATA SHEET
Silicon Transistor
2SC5337
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
DESCRIPTION
T.
2SC5337 - NPN SILICON RF TRANSISTOR
(Renesas)
Preliminary Data Sheet
2SC5337
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
FEATURES
• Low distortion: .
