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2SC5336 NPN TRANSISTOR

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Description

PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER .

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Datasheet Specifications

Part number
2SC5336
Manufacturer
NEC
File Size
49.20 KB
Datasheet
2SC5336_NEC.pdf
Description
NPN TRANSISTOR

Features

* PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1
* High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Collector to Base V

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electroni

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