* φ3.1±0.1 4.0 14.0±0.5 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 60 80 60 80 7 12 8 45 2 150
* 55 to +150 Unit V 2SD1277 2SD1277A 2SD1277 1.4±0.1 1.3±0.2 Solder Dip 0.8±0.1 0.5 +0.2
* 0.1 Collector to base voltage Collector
2SD1277
Panasonic Semiconductor
62.53 KB
Silicon npn transistor.
Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For midium speed power switching Complementary to 2S.
📁 Related Datasheet
2SD1270 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1270
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB945
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Uni.
2SD1270 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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: VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.
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(Panasonic Semiconductor)
Power Transistors
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Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2SB946A
Unit: mm
0.7±0.1 10.0±0.
2SD1271 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
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2SD1271A - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1271, 2SD1271A
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB946 and 2SB946A
Unit: mm
0.7±0.1 10.0±0.
2SD1271A - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1271A
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Breakdown V.
