* 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°
2SD1485
Panasonic Semiconductor
44.75 KB
Silicon npn transistor.
Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB1054
Unit: mm
q
q q q
16.2±0.5.
📁 Related Datasheet
2SD1480 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1052
Unit: mm
0.7±0.1 10.0±0.2 5.5±0.2.
2SD1480 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SD1480
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Vo.
2SD1481 - SILICON POWER TRANSISTOR
(NEC)
..
DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
2SD1481 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1481
DESCRIPTION ·On-chip C-to-B Zener diode for surge voltage absorption ·Lo.
2SD1484K - Medium Power Transistor
(Rohm)
2SD1949 / 2SD1484K
Middle Power Transistor (50V, 500mA)
Datasheet
Parameter
VCEO IC
Value
50V 500mA
lFeatures
1)High current. (IC=0.5A) 2)Low VCE(.
2SD1484K - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
.
2SD1484K - Medium Power Transistor
(Kexin)
SMD Type
TransistIoCrs
Medium Power Transistor 2SD1484K
Features
High current.(IC=5A). Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=1.
2SD1485 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1485
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·C.
