* q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC
2SD2254
Panasonic Semiconductor
57.15 KB
Silicon npn transistor.
Power Transistors
2SD2254
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1492
φ 3.3±0.2 5.0±0.3 3.0
.
📁 Related Datasheet
2SD2250 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.3±0.2 5.0±0.3 3.0
.
2SD2250 - Silicon NPN Darlington Power Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain-
: hFE= 5000.
2SD2251 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2251
..
DESCRIPTION ·With TO-3PML package ·High sp.
2SD2251 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Di.
2SD2252 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
.
2SD2253 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2253
..
DESCRIPTION ·With TO-3P(H)IS package ·Buil.
2SD2253 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damp.
2SD2254 - Silicon PNP Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2254
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1492
φ 3.3±0.2 5.0±0.3 3.0
.
