* High breakdown voltage and high current (VCEO = 120 V, I C = 25 A)
* Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1 2 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to
2SD2256
Hitachi
31.96 KB
Silicon npn transistor.
2SD2256
Silicon NPN Triple Diffused
ADE-208-928 (Z) 1st. Edition Sep. 2000 Application
Low frequency power amplifier complementary pair with 2SB1494
.
📁 Related Datasheet
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