2SD2257 Datasheet - Toshiba Semiconductor

2SD2257 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2257 Unit: mm High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector po.

2SD2257 Datasheet (128.96 KB)