2SD2241
Toshiba ↗ Semiconductor
115.00 KB
Silicon npn transistor.
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2241
Switching Applications
2SD2241
Unit: mm
* High DC current gain: hFE = 2000 (min)
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📁 Related Datasheet
2SD2240 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2240 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2240A - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise amplification
1.6±0.15
Unit: m.
2SD2241 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2241
..
DESCRIPTION ·With TO-220F package ·High DC.
2SD2241 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Volt.
2SD2242 - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Feat.
2SD2242A - Silicon NPN Transistor
(Panasonic Semiconductor)
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Feat.
2SD2247 - Silicon NPN Transistor
(Hitachi Semiconductor)
2SD2247
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SD2247
Absolute Maximum.
