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2SD2206 Datasheet - Toshiba Semiconductor

2SD2206 Silicon NPN Transistor

2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltag.

2SD2206_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2206

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

131.45 KB

Description:

Silicon npn transistor.

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2SD2206 2SD2206 Silicon NPN Transistor Toshiba Semiconductor

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