2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction tem
2SD2204_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SD2204
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
220.54 KB
Description:
Npn transistor.