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2SD2248 Silicon NPN Transistor

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Description

2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2248 Hammer Drive, Pulse Motor Drive Applications .

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Applications

* For Inductive Load Drive Unit: mm
* High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
* Built-in zener diode between collector and base Maximum Ratings (Ta = 25°C) Characteristics Collector-base volta

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